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FAN7085_F085 High Side Gate Driver with Recharge FET
March 2009
FAN7085_F085
Features
* Qualified to AEC Q100
High Side Gate Driver with Recharge FET
Description
The FAN7085_F085 is a high-side gate drive IC with reset input and built-in recharge FET. It is designed for high voltage and high speed driving of MOSFET or IGBT, which operates up to 300V. Fairchild's high-voltage process and common-mode noise cancellation technique provide stable operation in the high side driver under high-dV/dt noise circumstances. Logic input is compatible with standard CMOS outputs. The UVLO circuits prevent from malfunction when VCC and VBS are lower than the specified threshold voltage. It is available with space saving SOIC-8 Package. Minimum source and sink current capability of output driver is 250mA and 250mA. Built-in recharge FET to refresh bootstrap circuit is very useful for circuit topology requiring switches on low and high side of load.
* Floating channel designed for bootstrap operation fully operational up to 300V. * * Tolerance to negative transient voltageon VS pin dv/dt immune.
* Gate drive supply range from 4.5V to 20V * Under-voltage lockout * CMOS Schmitt-triggered inputs with pull-down and pull-up * High side output out of phase with input (Inverted input) * Reset input * Internal recharge FET for bootstrap refresh
SOIC-8
Typical Applications
* Diesel and gasoline injectors/valves * MOSFET-and IGBT high side driver applications
Ordering Information
Device
FAN7085CM FAN7085CMX X : Tape & Reel type
Package
SOIC-8 SOIC-8
Operating Temp.
-40 C ~ 125 C -40 C ~ 125 C
(c)2008 Fairchild Semiconductor Corporation
1
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FAN7085_F085 Rev. 1.0.3
FAN7085_F085 High Side Gate Driver with Recharge FET
Block Diagrams
VB
Under Voltage Reset VB to VS Pulse Filter Flip Flop Brake before make
HO VS
VCC
Under Voltage Reset VCC to GND
RESET-
INGND
Logic Pulse Filter
Level Shifter ON Delay Level Shifter OFF
Pin Assignments
1 2 3 4
VCC INGND
VB HO NC
8 7 6 5
RESET- VS
Pin Definitions
Pine Number
1 2 3 4 5 6 7 8
Pin Name
VCC INGND RESETVS NC HO VB
I/O
P I P I P A P
Pin Function Description
Driver supply voltage, typically 5V Driver control signal input (Negative Logic) Ground Driver enable input signal (Negative Logic) High side floating offset for MOSFET Source connection No connection (No Bond wire) High side drive output for MOSFET Gate connection Driver output stage supply
2 FAN7085_F085 Rev. 1.0.3
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Recharge Path
FAN7085_F085 High Side Gate Driver with Recharge FET
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to GND.
Parameter
High side floating supply voltage High side driver output stage voltage
Neg. transient: 0.5 ms, external MOSFET off
Symbol
VBS VB Vs VHO VC C VIN VRES Pd
1)
Min.
-0.3 -5 -25 VS-0.3 -0.3 -0.3 -0.3
Max.
25 325 300 VB+0.3 25 Vcc+0.3 Vcc+0.3 0.625 200
Unit
V V V V V V V W C/W V V
High side floating supply offset voltage
Neg. transient 0.2 us
High side floating output voltage Supply voltage Input voltage for INInput voltage for RESETPower Dissipation
1)
Thermal resistance, junction to ambient Electrostatic discharge voltage (Human Body Model) Charge device model Junction Temperature Storage Temperature
Rthja VESD VCDM Tj TS -55 1.5K 500
150 150
C C
Note: 1) The thermal resistance and power dissipation rating are measured bellow conditions; JESD51-2: Integrated Circuit Thermal Test Method Environmental Conditions - Natural condition(StillAir) JESD51-3: Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Package
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.-40C <= Ta < =
1 2 5C
Parameter
High side floating supply voltage(DC)
Transient:-10V@ 0.2 us
Symbol
VB VS VS VHO dv/dt VCC VI N VR E S E T Fs tIN(Low,min) tIN(high,min) VB(MIN)4) Ta
Min.
VS+4.5 -3 -25 Vs 4.5 0 0
Max.
VS+20 300 300 VB 50 20 Vcc Vcc 200K
Unit
V V V V V/ns V V V Hz ns ns V C
High side floating supply offset voltage(DC)
@VBS=7V
High side floating supply offset voltage(Transient)
0.2us @VBS<25V
High side floating output voltage Allowable offset voltage Slew Rate 1) Supply voltage for logic part Input voltage for INInput voltage for RESETSwitching frequency 2) Minimum low input width 3) Minimum high input width
3)
1000 60 4 -40
125
Minimum operating voltage of VB related to GND Ambient temperature
Note: 1) Guaranteed by design. 2) Duty = 0.5, VBS >=7V
3) Guaranteed by design. Pulse widths below the specified values, may be ignored. Output will either follow the input signal or will ignore it. No false output state is guaranteed when minimum input width is smaller than tin 4) Guaranteed by design
3 FAN7085_F085 Rev. 1.0.3
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FAN7085_F085 High Side Gate Driver with Recharge FET
Statics Electrical Characteristics
Unless otherwise specified, -40C <= Ta
<= 125 C,
VC C = 5V, VBS = 7V, VS = 0V, V RESET = 5V, RL = 50, CL = 2.5nF.
Parameter
VCC and VBS Supply Characteristics VCC and VBS supply under voltage positive going threshold VCC and VBS supply under voltage negative going threshold VCC and VBS under voltage hysteresis Under voltage lockout response time Offset supply leakage current Quiescent Vcc supply current Quiescent VBS supply current Quiescent VBS supply current VBS drop due to output turn-on (Design guaranty) Input Characteristics High logic level input voltage for INLow logic level input voltage for INLow logic level input bias current for INHigh logic level input bias current for INFull up resistance at IN High logic level input voltage for RESETLow logic level input voltage for RESETHigh logic level input current for RESETLow logic level input bias current for RESETFull down resistance at RESETOutput characteristics High level output voltage, VB - VHO Low level output voltage, VHO-GND Peak output source current Peak output sink current Equivalent output resistance
Symbol
VCCUV+ VBSUV+ VCCUVVBSUVVCCUVH VBSUVH tduvcc tduvbs ILK IQCC IQBS1 IQBS2 VBS
Conditions
Vcc and VBS rising from 0V Vcc and V dropping from 5V BS VCC: 6.5V->2.4V or 2.4V->6.5V VBS: 6.5V->2.4V or 2.4V->6.5V VB=VS=300V Vcc =20V Static mode, VBS=7V, VIN =0 or 5V Static mode, VBS =16V, VIN =0 or 5V VBS =7V, Cbs=1uF, tdIG-IN =3uS, tTEST=100uS
Min.
2.8 0.02 0.5 0.5 -
Typ.
3.7 3.4 0.3
Max.
4.3 20 20
Unit
V V V us us uA uA uA uA mV
-
200 500 100 200 210
VIH VIL IINIIN+ RIN VRH VR L IRES+ IR E S RRES VRESET=5V VRESET=0 VIN =0 VIN =5V
0.6VC C 5 83 0.6Vcc
25 200 -
0.28VC C 60 5 1000 0.28Vcc
V V uA uA V V uA uA
5
25
60 5
83
200
1000
VOH VOL IO + IOROP RON
IO=0 IO=0 VIN =5V VIN =0
250 250
450 450 15.5 15.5
0.1 0.1 28 28
V V mA mA
Recharge Characteristics Recharge TR turn-on propagation delay Recharge TR turn-off propagation delay Recharge TR on-state voltage drop Dead Time Characteristics High side turn-off to recharge gate turn-on Recharge gate turn-off to high side turn-on DTHOFF DTHON Vcc=5V, VS=7V Vcc=5V, VS=7V 4 0.1 7.8 0.4 9.8 0.7 us us Ton_rech Toff_rech VRECH Is=1mA, VIN=5V @125C 4 7.9 0.2 9.8 0.4 1.2 us us V
Note: The input parameter are referenced to GND. The VO and IO parameters are referenced to GND.
4 FAN7085_F085 Rev. 1.0.3
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FAN7085_F085 High Side Gate Driver with Recharge FET
Dynamic Electrical Characteristics
Unless otherwise specified, -40C <= Ta
<= 125 C,
VC C = 5V, VBS = 7V, VS = 0V, V RESET = 5V, RL = 50, CL = 2.5nF.
Parameter
Input-to-output turn-on propagation delay Input-to-output turn-off propagation delay RESET-to-output turn-off propagation delay RESET-to-output turn-on propagation delay Output rising time
Symbol
tplh tphl tphl_res tplh_res tr1 tr2 tr3 tr4
Conditions
50% input level to 10% output level, VS = 0V 50% input level to 90% output level VS = 0V 50% input level to 90% output level 50% input level to 10% output level Tj=25C
Min. Typ. Max. Unit
0.56 0.15 0.17 0.56 65 1 0.5 0.5 1 200 400 200 400 200 300 200 300 us us us us ns ns ns ns ns ns ns ns
Tj=25C,VBS =16V VBS =16V Tj=25C -
65 25 -
Output falling time
tf1 tf2 tf3 tf4
Tj=25C,VBS =16V VBS =16V
25 -
5 FAN7085_F085 Rev. 1.0.3
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FAN7085_F085 High Side Gate Driver with Recharge FET
Application Information
1. Logic Tables VCC
< VCCUVLOX X > VCCUVLO+ > VCCUVLO+
Notes: X means independent from signal IN-=LOW indicates that the high side NMOS is ON IN-=HIGH indicates that the high side NMOS is OFF RechFET =ON indicates that the recharge MOSFET is ON RechFET =OFF indicates that the recharge MOSFET is OFF
VBS
X X X > VBSUVLO+ < VBSUVLO-
RESETX LOW X HIGH HIGH
INX X HIGH LOW LOW
Ho
OFF OFF OFF ON OFF
RechFET
ON ON ON OFF OFF
6 FAN7085_F085 Rev. 1.0.3
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FAN7085_F085 High Side Gate Driver with Recharge FET
Typical Application Circuit
1. Typical Application Circuit
D1 VCC
VCC INGND RESETVB HO NC VS
Up to 300V
R1 C2 R2 Load C3
C1
2. Application Example
From Charge Pump
D5
Voltage Source
5V
VCC INGND RESETVB HO NC VS
R1 S1 C3 R2
C2
C1
D3 R3 From LS Driver C4 R4 S2 D4
Load
GND
7 FAN7085_F085 Rev. 1.0.3
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FAN7085_F085 High Side Gate Driver with Recharge FET
Input-Output Waveforms
1. Input/Output Timing Diagrams
IN-
RESET-
90%
90%
VS
10% tr tf 10 %
VHO Recharge
tplh
tphl
Toff_rech
Ton_rech
Figure.1 Input and Output Timing Diagram and Switching Time Waveform Definition
2. Reset Timing Diagrams
IN-
RESET-
VHO
tplh_res
tphl_res
Figure.2 Reset and Output Timing Diagram
8 FAN7085_F085 Rev. 1.0.3
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FAN7085_F085 High Side Gate Driver with Recharge FET
3.VB Drop Voltage Diagram
Ig
INIg VCC VB HO NC 50R 1u
RESET-
INGND
RESET- VS
7V
2n5
VB-VS
VB drop
Figure3.b VB Drop Voltage Test Circuit
Brake before make
Figure3.a VB Drop Voltage Diagram
9 FAN7085_F085 Rev. 1.0.3
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FAN7085_F085 High Side Gate Driver with Recharge FET
Performance Graphs
This performance graphs based on ambient temperature -40 C ~ 1 2 5C
3.2
VBS=7V, RL=50, CL=2.5nF
2.6
VBS=7V, RL=50, CL=2.5nF
3.0
2.4
Vinth+ (V)
2.8
Vinth- (V)
2.2
2.6
2.0 2.4
Typ. Typ.
2.2
1.8 4.4 4.7 5.0 5.3 5.6 5.9 6.2 6.5
4.4
4.7
5.0
5.3
5.6
5.9
6.2
6.5
Vsupply (V)
Figure 4a. Positive IN and RESET Threshold vs VCC Supply
Vsupply (V)
Figure 4b. Negative IN and RESET Threshold vs VCC Supply
2000
500
Output Source Cureent (mA)
VCC=5V, RL=50, CL=2.5nF
VCC=5V,VBS=7V, RL=50, CL=2.5nF
Typ.
Output Sink Cureent (mA)
1600
-40oC
450
1200
125 C
o
400
800
350
400
0 5 10 15 20
300 -50
0
50
100
o
150
VBS(V)
Temperature ( C)
Figure5a. Output Sink Current vs VBS Supply
Figure5b. Output Source Current vs Tempearature
650
250
VCC=5V,VBS=7V, RL=50, CL=2.5nF
Turn-on Propagation Delay (ns)
Turn-off Propagation Delay (ns)
VCC=5V,VBS=7V, RL=50, CL=2.5nF
620
200
590
560
Typ.
150
Typ.
530
500 -50
0
50
100
o
150
100 -50
0
50
100
o
150
Temperature( C)
Figure 6a. Turn-On Propagation Delay Time vs Temperature
Temperature ( C)
Figure 6b. Turn-Off Propagation Delay Time vs Temperature
10 FAN7085_F085 Rev. 1.0.3
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FAN7085_F085 High Side Gate Driver with Recharge FET
700
VCC=5V, VBS=7V, RL=50, CL=2.5nF
RES-to-Output Turn-off Propagation Delay (ns)
RES-to-Output Turn-on Propagation Delay (ns)
250
VCC=5V, VBS=7V, RL=50, CL=2.5nF
650
200
600
150
Typ.
550
Typ.
500 -50
0
50
100
o
150
100 -50
0
50
100
o
150
Temperature ( C)
Temperature ( C)
Figure 7a. RES to Output Turn-On Propagation Delay vs Temperature
Figure 7b. RES to Output Turn-Off Propagation Delay vs Temperature
50
50
40
Typ.
Logic "1" RES Input Current ( uA)
VCC=5V, RL=50, CL=2.5nF
VCC=5V, RL=50, CL=2.5nF
Logic "0" Input Current ( uA)
40
30
30
Typ.
20
20
10
10
0 -50
0
50
100
o
150
0 -50
0
50
100
o
150
Temperature ( C)
Figure 8. Logic "0" IN Input Current vs Temperature
Temperature ( C)
Figure 9. Logic "1" RESET Input Current vs Temperature
5.0 4.5
5.0 4.5
Max.
VBS Supply Voltage(V)
VBS Supply Voltage(V)
4.0
Typ.
4.0 3.5 3.0
Max.
3.5 3.0 2.5 2.0 -50
Min.
Typ.
Min.
2.5 2.0 -50
0
50
100
o
150
0
50
100
o
150
Temperature( C)
Temperature( C)
Figure 10a. VBS Under Voltage Threshold(+) vs Temperature
Figure 10b. VBS Under Voltage Threshold(-) vs Temperature
11 FAN7085_F085 Rev. 1.0.3
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FAN7085_F085 High Side Gate Driver with Recharge FET
5.0 4.5
5.0 4.5
Max.
VC C Supply Voltage(V)
4.0
Typ.
VC C Supply Voltage(V)
4.0 3.5
Max.
3.5 3.0 2.5 2.0 -50
Min.
Typ.
3.0
Min.
2.5 2.0 -50
0
50
100
o
150
0
50
100
o
150
Temperature( C)
Temperature( C)
Figure 11a. VCC Under Voltage Threshold(+) vs Temperature
Figure 11b. VCC Under Voltage Threshold(-) vs Temperature
Recharge Transistor Turn-on Propagation Delay (us)
Recharge Gate Turn-off Propagation Delay (ns)
10
VCC=5v, VBS=7VRL=50, CL=2.5nF
300
VBS=7V VCC=5v, VBS=7VRL=50, CL=2.5nF
260
8
Typ.
220
6
180
Typ.
4 -50
0
50
100
o
150
140 -50
0
50
100
o
150
Temperature( C)
Figure 12. Recharge FET Turn-on Delay time
Temperature ( C)
Figure 12. Recharge FET Turn-off Delay time
VCC=5v, VBS=7VRL=50, CL=2.5nF
High Side Turn-off to Recharge Gate Turn-on (us)
1.8
10
VCC=5v, VBS=7VRL=50, CL=2.5nF
1.4
8
Typ.
I ( mA)
1.0
6
0.6
Typ.
0.2 0.4
0.6
0.8
1.0
1.2
4 -50
0
50
100
o
150
V (V)
Temperature ( C)
Figure 14. Recharge FET I-V curve
Figure 15. High Side Turn-off to Recharge FET turn-on VS Temperature
12 FAN7085_F085 Rev. 1.0.3
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FAN7085_F085 High Side Gate Driver with Recharge FET
Package Dimensions
13 FAN7085_F085 Rev. 1.0.3
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Rev. I39
(c) 2008 Fairchild Semiconductor Corporation
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